Depletion of surface accumulation charge in InN by anodic oxidation

Si-doped InN layer by molecular beam epitaxy was subjected to anodic oxidation in 0.1 M potassium hydroxide KOH electrolyte and characterized by electrochemical methods to derive carrier profile at the InN surface. The obtained results were compared to the characteristics of a planar resistor structure and vertical metal-oxide-semiconductor MOS diodes with Ni-metal contacts on the oxidized InN. Both measurements in electrolyte and in air confirmed the formation of a surface oxide layer after the anodic treatment and depletion of the surface accumulation charge of the as-grown InN. The upward band bending of InN at the oxide interface was also concluded from the analysis of capacitance-voltage characteristics of the MOS diodes. Transmission electron microscopy revealed a nonuniform oxide layer containing porelike structures of a few nanometers in diameter. © 2009 American Institute of Physics. DOI: 10.1063/1.3073930